米*YHeX MP02XXX190 Series SEMICONDUCTOR Phase Control Dual SCR,SCR/Diode Modules Replaces January 2000 version,DS4479-4.0 DS4479-5.0July2002 FEATURES KEY PARAMETERS ■Dual Device Module VOR 1200V Electrically Isolated Package e 5500A Pressure Contact Construction 190A International Standard Footprint AVper amm) Vinol 3000V Alumina(non-toxic)Isolation Medium Code Circuit APPLICATIONS HBT ■Motor Control 片内 Controlled Rectifier Bridges HBP 十 ■Heater Control ■AC Phase Control HBN 大十- Fig.1 Circuit diagrams VOLTAGE RATINGS Type Repetitive Conditions Number Peak Voltages VDRM VRRM MP02XXX190-12 1200 T,=125℃ MP02XXX190-10 1000 loRM=RM=30mA MP02XXX190-08 1000 Vos VRsu= VoRu&V+100V respectively Lower voltage grades available ORDERING INFORMATION Module type code:MP02. For further information see Package Details Order As: MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 Fig.2 Electrical connections-(not to scale) MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08 MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08 Note:When ordering.please use the complete part number. 1/8 www.dynexsemi.com
1/8 www.dynexsemi.com MP02XXX190 Series MP02XXX190 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2000 version, DS4479-4.0 DS4479-5.0 July 2002 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (non-toxic) Isolation Medium APPLICATIONS ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control VOLTAGE RATINGS ORDERING INFORMATION Order As: MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08 MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08 Note: When ordering, please use the complete part number. KEY PARAMETERS VDRM 1200V I TSM 5500A I T(AV)(per arm) 190A Visol 3000V Code Circuit HBT HBP HBN Fig.1 Circuit diagrams 1 23 Fig. 2 Electrical connections - (not to scale) Module type code: MP02. For further information see Package Details. Lower voltage grades available. Repetitive Peak Voltages VDRM VRRM Type Number 1200 1000 1000 MP02XXX190-12 MP02XXX190-10 MP02XXX190-08 Tvj = 125o C I DRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively Conditions
MP02XXX190 Series BYNex SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS-PER ARM Stresses above those listed under'Absolute Maximum Ratings'may cause permanent damage to the device.In extreme conditions,as with all semiconductors,this may include potentially hazardous rupture of the package.Appropriate safety precautions should always be followed.Exposure to Absolute Maximum Ratings may affect device reliability. Symbol Parameter Test Conditions Max. Units lTuv) Mean on-state current Half wave resistive load Tease=75'C 190 A Tae=85℃ 160 9 TRMS RMS value Tease=75'C 300 A ITsM Surge(non-repetitive)on-current 10ms half sine,T=125'C 6.8 kA E I2t for fusing V。=0 231×109 A2s 1sM Surge(non-repetitive)on-current 10ms half sine,T=125'C 5.5 kA A I2t for fusing V=50%VDRM 150x10的 A2s Vd Isolation voltage Commoned terminals to base plate. 3000 V AC RMS,1 min,50Hz THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rae Thermal resistance-junction to case dc 0.21 C/kW (per thyristor or diode) Half wave - 0.22 C/kW 3 Phase 0.23 C/kW Rie间 Thermal resistance-case to heatsink Mounting torque =6Nm 0.07 C/kW (per thyristor or diode) with mounting compound Ty Virtual junction temperature Reverse (blocking) 125 T的 Storage temperature range 40 125 ℃ Screw torque Mounting-M6 6(55) Nm (b.ins) Electrical connections-M6 5(44) Nm (lb.ins) Weight(nominal) 350 218 www.dynexsemi.com
2/8 www.dynexsemi.com MP02XXX190 Series ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Test Conditions Half wave resistive load Tcase = 75˚C Tcase = 85˚C Tcase = 75˚C 10ms half sine, Tj = 125˚C VR = 0 10ms half sine, Tj = 125˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Symbol I T(AV) I T(RMS I TSM I 2 t I TSM I 2 t Visol Units A A A kA A2 s kA A2 s V Max. 190 160 300 6.8 231 x 103 5.5 150 x 103 3000 Parameter Mean on-state current RMS value Surge (non-repetitive) on-current I 2 t for fusing Surge (non-repetitive) on-current I 2 t for fusing Isolation voltage Test Conditions dc Half wave 3 Phase Mounting torque = 6Nm with mounting compound Reverse (blocking) - Mounting - M6 Electrical connections - M6 - Parameter Thermal resistance - junction to case (per thyristor or diode) Thermal resistance - case to heatsink (per thyristor or diode) Virtual junction temperature Storage temperature range Screw torque Weight (nominal) THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-hs) Tvj Tstg - - Units ˚C/kW ˚C/kW ˚C/kW ˚C/kW ˚C ˚C Nm (lb.ins) Nm (lb.ins) g Max. 0.21 0.22 0.23 0.07 125 125 6 (55) 5 (44) 350 Min. - - - - - –40 - - -
BYNeX MP02XXX190 Series SEMICONDUCTOR DYNAMIC CHARACTERISTICS-THYRISTOR Symbol Parameter Test Conditions Min. Max. Units RRDRM Peak reverse and off-state current At VRRVoRM T=125'C 30 mA dV/dt Linear rate of rise of off-state voltage T067%VmwT=125*C 1000 V/us dl/dt Rate of rise of on-state current From 67%VoRM to 400A, Repetitive 50Hz 500 A/us Gate source 20V,202, t=0.5us,T=125C V.co Threshold voltage At T=125'C.See note 1 、 0.88 V On-state slope resistance At Ty=125'C.See note 1 0.7 m2 Note 1:The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only.Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units Nat Gate trigger voltage VoM=5V,Tce=25℃ 3.0 V lat Gate trigger current VoRM=5V,Tease =25C 150 mA Va Gate non-trigger voltage At VoRM T=125C 0.25 V Vrau Peak forward gate voltage Anode positive with respect to cathode 30 VEGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig.5 100 W Pouv Mean gate power 5 W 3/8 www.dynexsemi.com
3/8 www.dynexsemi.com MP02XXX190 Series Units mA V/µs A/µs V mΩ Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 400A, Repetitive 50Hz Gate source 20V, 20Ω, t r = 0.5µs, Tj = 125˚C At Tvj = 125˚C. See note 1 At Tvj = 125˚C. See note 1 Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Threshold voltage On-state slope resistance DYNAMIC CHARACTERISTICS - THYRISTOR Symbol I RRM/IDRM dV/dt dI/dt VT(TO) rT Max. 30 1000 500 0.88 0.7 Min. - - - - - Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25o C VDRM = 5V, Tcase = 25o C At VDRM, Tcase = 125o C Anode positive with respect to cathode Anode negative with respect to cathode - Anode positive with respect to cathode See table fig. 5 - Symbol VGT I GT VGD VFGM VFGN VRGM I FGM PGM PG(AV) GATE TRIGGER CHARACTERISTICS AND RATINGS Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
MP02XXX190 Series BYNeX SEMICONDUCTOR 20 11m 2000 Measured under pulse conditions 2t=12xt T=125C 2 31500 150 100 24 100 500 12t value -(A2s x 103) 50 10 12345 10 203050 .0 1.5 2.0 2.5 Instantaneous on-state voltage,V-(V) ms Cycles at 50Hz Duration Fig.3 Maximum(limit)on-state characteristics Fig.4 Surge(non-repetitive)on-state current vs time (Thyristor or diode with 50%VRRM at Ta=125C) 100 0.3 Rth(j-hs) 10 0.2 pper limit95 0.1 Reaion of certain triggering 5明 01 oH 0.001 0.01 0.1 10 0.001 0.010 0.100 1.0 10 100 Gate trigger current,IGT-(A) IFGM Time-(s) Fig.5 Gate characteristics Fig.6 Transient thermal impedance-dc 4/8 www.dynexsemi.com
4/8 www.dynexsemi.com MP02XXX190 Series 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 Instantaneous on-state current, IT - (A) Measured under pulse conditions Tj = 125˚C Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125˚C) Fig. 5 Gate characteristics 0.001 0.010 0.100 1.0 10 100 Time - (s) 0 0.1 0.2 0.3 Thermal impedance - (˚C/W) Rth(j-hs) Rth(j-c) 0.001 0.01 0.1 1 10 Gate trigger current, IGT - (A) 100 10 1 0.1 Gate trigger voltage, VGT - (V) 100W 50W 10W 20W 5W Region of certain triggering Upper limit 95% Lower limit 5% Tj = 125˚C Tj = 25˚C Tj = -40˚C VGD IFGM 20 15 10 5 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 45 50 ms Cycles at 50Hz Duration 50 100 I2t value - (A2s x 103) I2t I 2t = Î2 x t 2 150 10 20 30
BYNeX MP02XXX190 Series SEMICONDUCTOR 300 400 d.c. 1807 350 250 120° 90° 300 180 8200 60° 120 250 90 3160 30 60 30 150 100 100 50 0 50 100150 200 250 50 100150200 250 300 Mean on-state current,I(AV)-(A) Mean on-state current,I(AV)-(A) Fig.7 On-state power loss per arm vs on-state current at Fig.8 On-state power loss per arm vs on-state current at specified conduction angles,sine wave 50/60Hz specified conduction angles,square wave 50/60Hz 140 140 120 120 100 100 80 80 60 d.c. 40 40 20 20 30 60°90°120 180° 306090120180 0 50 100 150 200 250 0 50 100 150 200 250 300 Mean on-state current,I(AV)-(A) Mean on-state current,I(Av)-(A) Fig.9 Maximum permissible case temperature vs on-state Fig.10 Maximum permissible case temperature vs on-state current at specified conduction angles,sine wave 50/60Hz current at specified conduction angles,square wave 50/60Hz 5/8 www.dynexsemi.com
5/8 www.dynexsemi.com MP02XXX190 Series Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 400 350 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ d.c. 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 d.c